发明名称 |
METHOD OF FORMING CURRENT TRACKS ON SEMICONDUCTORS |
摘要 |
PURPOSE: A method for forming a current track on a semiconductor is provided to form a materially uniform current magnetic track on a semiconductor using the composite of an inorganic acid etching agent which contains hot melt resist and a polyol. CONSTITUTION: A semiconductor includes a front side and a back side and a reflection preventing layer is made of SiOx(Silicon Dioxide) or silicon nitride in the front side. Hot melt ink resist includes a hydrogenated rosin resin with one or more acid functional groups and one or more fatty acids. Hot melt ink resist with at least a 190 acid value is selectively spread on a reflection preventing layer. The etching composition including an inorganic acid is spread on the semiconductor. The exposed part of the reflection preventing layer of the semiconductor is simulteneosly etched and under cutting is controlled. |
申请公布号 |
KR20110127088(A) |
申请公布日期 |
2011.11.24 |
申请号 |
KR20110046826 |
申请日期 |
2011.05.18 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. |
发明人 |
BARR ROBERT K.;DONG HUA |
分类号 |
H01L31/18;H01L31/0216;H01L31/042 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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