发明名称 METHOD OF FORMING CURRENT TRACKS ON SEMICONDUCTORS
摘要 PURPOSE: A method for forming a current track on a semiconductor is provided to form a materially uniform current magnetic track on a semiconductor using the composite of an inorganic acid etching agent which contains hot melt resist and a polyol. CONSTITUTION: A semiconductor includes a front side and a back side and a reflection preventing layer is made of SiOx(Silicon Dioxide) or silicon nitride in the front side. Hot melt ink resist includes a hydrogenated rosin resin with one or more acid functional groups and one or more fatty acids. Hot melt ink resist with at least a 190 acid value is selectively spread on a reflection preventing layer. The etching composition including an inorganic acid is spread on the semiconductor. The exposed part of the reflection preventing layer of the semiconductor is simulteneosly etched and under cutting is controlled.
申请公布号 KR20110127088(A) 申请公布日期 2011.11.24
申请号 KR20110046826 申请日期 2011.05.18
申请人 ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. 发明人 BARR ROBERT K.;DONG HUA
分类号 H01L31/18;H01L31/0216;H01L31/042 主分类号 H01L31/18
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