发明名称 |
Silicon Controlled Rectifier Based Electrostatic Discharge Protection Circuit With Integrated JFETS, Method Of Operation And Design Structure |
摘要 |
An enhanced turn-on time SCR based electrostatic discharge (ESD) protection circuit includes an integrated JFET, method of use and design structure. The enhanced turn-on time silicon controlled rectifier (SCR) based electrostatic discharge (ESD) protection circuit includes an integrated JFET in series with an NPN base. |
申请公布号 |
US2011286135(A1) |
申请公布日期 |
2011.11.24 |
申请号 |
US20100782296 |
申请日期 |
2010.05.18 |
申请人 |
CAMPI, JR. JOHN B.;CHANG SHUNHUA T.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;MUHAMMAD MUJAHID;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CAMPI, JR. JOHN B.;CHANG SHUNHUA T.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;MUHAMMAD MUJAHID |
分类号 |
H02H9/04;G06F17/50;H01L29/66 |
主分类号 |
H02H9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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