发明名称 Silicon Controlled Rectifier Based Electrostatic Discharge Protection Circuit With Integrated JFETS, Method Of Operation And Design Structure
摘要 An enhanced turn-on time SCR based electrostatic discharge (ESD) protection circuit includes an integrated JFET, method of use and design structure. The enhanced turn-on time silicon controlled rectifier (SCR) based electrostatic discharge (ESD) protection circuit includes an integrated JFET in series with an NPN base.
申请公布号 US2011286135(A1) 申请公布日期 2011.11.24
申请号 US20100782296 申请日期 2010.05.18
申请人 CAMPI, JR. JOHN B.;CHANG SHUNHUA T.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;MUHAMMAD MUJAHID;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CAMPI, JR. JOHN B.;CHANG SHUNHUA T.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;MUHAMMAD MUJAHID
分类号 H02H9/04;G06F17/50;H01L29/66 主分类号 H02H9/04
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