| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a screening test of a gate insulating film can be readily performed. <P>SOLUTION: A semiconductor element 20 comprises a first and second main electrodes 21 and 22, and a gate electrode 30 provided on a semiconductor substrate with a gate insulating film interposed therebetween. A diode 40 is provided on the semiconductor substrate, and electrically connects a gate terminal 31 and the first main electrode 21 to each other in an orientation so that transmission of a gate signal to the first main electrode 21 is reverse current. A test terminal 32 is provided on the semiconductor substrate and is electrically connected to the gate electrode 30. A resistance element 33 is provided on the semiconductor substrate and electrically connects the gate terminal 31 and the test terminal 32 to each other. <P>COPYRIGHT: (C)2012,JPO&INPIT |
