| 摘要 |
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a film covering a side face of the first metal pillar and a side face of the second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The film has a solder wettability poorer than a solder wettability of the first metal pillar and a solder wettability of the second metal pillar. The resin layer covers at least part of the film.
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