| 摘要 |
The present invention provides a method of adjusting a metal gate work function of an NMOS device, comprising: depositing a layer of metal nitride film or metal film on a high K dielectric as a metal gate electrode by a physical vapor deposition process; implanting elements such as Tb, Er, Yb or Sr into the metal gate electrode by an ion implantation process; performing a high temperature annealing so that the doped metal ions are driven to and accumulate on the interface between the metal gate electrode and the high K gate dielectric, or form dipoles by an interface reaction on the interface between the high K gate dielectric and SiO2, which achieves the object of adjusting an effective work function of the metal gate. This method can be widely used with simple steps included and convenient implementation. Also, the method has a strong capability of adjusting the metal gate work function, and is well-compatible with CMOS process. |
