SEMICONDUCTOR DEVICE

摘要

Disclosed is a semiconductor device, including a plurality of MISFETs (201, 202), which are configured from a plurality of unit MISFETs that are mutually connected in arrays, said MISFETs comprising a diffusion layer (205), which is formed upon each respective semiconductor substrate and configures a source/drain thereupon, and a gate (203), which is formed upon the diffusion layer (205). The standard deviation of the misalignment of the threshold voltage between the MISFETs (201, 202) is less than the standard deviation of the misalignment of the threshold voltage between single MISFETs having an area identical to the channel area for each MISFET, which is the sum of the products of the gate lengths and gate widths of each unit MISFET therein.