MOS STRUCTURE HAVING IN SITU DOPED SOURCE AND DRAIN AND MANUFACTURING METHOD THREROF

摘要

A manufacturing method of an MOS structure having in situ doped source and drain is provided. The method includes the steps that: a substrate (100) is provided; a high Ge component layer (200) is formed on the substrate (100); a gate stack (300) and one or several side walls, which are located on the both side of the gate stack (300) are formed on the high Ge component layer (200); the high Ge component layer (200) is etched to form the source area and drain area; a source and a drain (400) are separately formed in the source area and drain area by low temperature selectivity extension; the source and the drain (400) are heavy doped by inlet the dope gas during extension; the doped element is in situ active. An active heavy doped source and drain area is formed in Ge layer or SiGe layer having high Ge component.