PRODUCTION METHOD FOR THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY

摘要

Disclosed is a production method for a thin-film semiconductor device for display comprising: a first step that prepares a glass substrate (1); a second step that forms an undercoat layer (2) that includes a nitride film, on top of the glass substrate; a third step that forms a molybdenum metal layer (3M) on top of the undercoat layer; a fourth step that forms a gate electrode (3) from the metal layer by etching; a fifth step that forms a gate insulating film (4) on top of the gate electrode; a sixth step that forms a non-crystalline silicon layer as a non-crystalline semiconductor layer (5a), on top of the gate insulating film; a seventh step that anneals the non-crystalline silicon layer at 700ºC - 1400ºC and crystallizes the non-crystalline silicon layer to form a polycrystalline semiconductor layer (5p) from a polycrystalline silicon layer; an eighth step that forms a source electrode (8a) and a drain electrode (8b) in the upper part of the polycrystalline silicon layer; and a step within the third to seventh steps that performs hydrogen plasma processing at a high-frequency power of 0.098 - 0.262 W/cm2.