METAL FILM FORMING SYSTEM, METHOD OF FORMING METAL FILM, PROGRAM AND COMPUTER STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To form a metal film appropriately and efficiently on a substrate using a metal mixed liquid.

SOLUTION: A metal film forming system 1 includes: a carrying in/out station 2 that carries in/out a wafer W; a pre-treatment station 3 that applies a pre-treatment liquid on the wafer W to form a base film on the wafer W; a main-treatment station 4 that applies a mixed metal liquid on the wafer W having the base film formed thereon to form a metal film on the wafer W; and a load-lock unit 10 that connects the carrying in/out station 2, the pre-treatment station 3 and the main-treatment station 4. The pre-treatment station 3, the main-treatment station 4 and the lock-load unit 10 are configured so that the inside of each of the stations and the unit can be switched to an atmospheric-pressure atmosphere of an inert gas or to a reduced-pressure atmosphere.

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