发明名称 ELECTRON BEAM DRAWING APPARATUS, ELECTRON BEAM DRAWING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING MASK MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING TEMPLATE MANUFACTURING METHOD
摘要 According to one embodiment, there is provided a electron beam drawing apparatus includes an irradiation module which irradiates a resist coated onto a substrate with a electron beam, and a control module which controls the irradiation module and which acquires the relationship between an irradiation dose of the electron beam and a positional shift amount of a pattern, acquires a reference irradiation dose of the electron beam necessary to form a pattern on the resist, acquires an allowable positional shift amount allowed for the pattern, acquires a limit irradiation dose of the electron beam corresponding to the allowable positional shift amount on the basis of the relationship, acquires a saturated irradiation dose corresponding to a saturated positional shift amount on the basis of the relationship, and controls the irradiation module so as to irradiate all the divided pattern regions with a electron beam sequentially at least once.
申请公布号 US2011287345(A1) 申请公布日期 2011.11.24
申请号 US201113051935 申请日期 2011.03.18
申请人 SAITO MASATO 发明人 SAITO MASATO
分类号 G03F1/76;G03F1/78;G03F7/20;G21K5/10;H01L21/027 主分类号 G03F1/76
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