| 摘要 |
<P>PROBLEM TO BE SOLVED: To form an insulator film having such characteristics as low dielectric constant, low etching rate, and high insulation property. <P>SOLUTION: A set of steps includes a step in which the gas containing a predetermined element is supplied under such condition as CVD reaction is caused, into a process chamber which houses a substrate, so that a layer containing predetermined element is formed on the substrate, a step in which the gas containing carbon is supplied into the process chamber so that a layer containing carbon is formed on the layer containing predetermined element, to form a layer containing predetermined element and carbon, and a step in which the gas containing nitrogen is supplied into the process chamber so that the layer containing predetermined element and carbon is nitrided to form a carbonitride layer. Another step forms a carbonitride layer of predetermined thickness by performing the set by predetermined frequency. One cycle includes that step and a step in which the gas containing oxygen is supplied into the process chamber so that the carbonitride layer having the predetermined thickness is oxidized to form a carbonitride oxide film. The cycle is performed by predetermined frequency to form a carbonitride oxide film having a predetermined film thickness on the substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
