| 摘要 |
According to the embodiments, a plurality of positional relationships between a coordinate system for indicating a defect position on a wafer that is used by an inspection device and a coordinate system that is used in design data on a pattern is set, the defect position output by the inspection device and the design data are aligned by using each of the set positional relationships, and a local pattern of a portion in which the defect position is aligned is extracted from the design data for each positional relationship. Then, the extracted local pattern is classified based on a degree of matching of graphical feature. The number of classification patterns is calculated for each positional relationship. Then, a pattern dependence degree of the detected defect group is calculated by using the calculated number of classification patterns of each positional relationship. |
