| 摘要 |
Disclosed is a method of manufacturing a silicon carbide semiconductor apparatus which provides a smooth silicon carbide surface while maintaining a high impurity activation ratio. The method of manufacturing a silicon carbide semiconductor apparatus which forms an impurity region in the surface layer of a silicon carbide substrate includes the steps of implanting an impurity into the surface layer of the silicon carbide substrate, forming a carbon film on the surface of the silicon carbide substrate, preliminarily heating the silicon carbide substrate with the carbon film as a protective film, and thermally activating the silicon carbide substrate with the carbon film as a protective film. |
