| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrode for a power storage device, having less deterioration due to charge and discharge, and a method for manufacturing the electrode for a power storage device, and further, to provide a power storage device having large capacity and high endurance. <P>SOLUTION: In an electrode of a power storage device in which an active material is formed over a collector, the surface of the active material is formed of a crystalline semiconductor film having a ä110} crystal plane. The crystalline semiconductor film having a ä110} crystal plane may be a crystalline silicon film containing a metal element which reacts with silicon to form a silicide. Alternatively, the crystalline semiconductor film having a ä110} crystal plane may be a crystalline semiconductor film containing silicon as its main component and containing a metal element, which reacts with silicon to form a silicide, and germanium. <P>COPYRIGHT: (C)2012,JPO&INPIT |
