METHOD AND APPARATUS FOR IN-SITU MONITORING OF PLASMA ETCHING AND DEPOSITION PROCESSES USING PULSED BROADBAND LIGHT SOURCE

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for monitoring of plasma etching and deposition processes having a non-extended light source.

SOLUTION: The present invention describes an interferometric method and an interferometric apparatus for in-situ monitoring of a thin film thickness and of etching and deposition rates of the thing film using a flash lamp 35 providing a high instantaneous power pulse and having a wide spectral width. The optical path between the flash lamp and a spectrograph 40 used for detecting light reflected from a wafer is substantially transmissive to an ultraviolet range of the spectrum. Software algorithms calculate film thickness and etching and deposition rates.

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