发明名称 SUBSTRATE PROCESSING APPARATUS, CONTROL DEVICE THEREOF, AND CONTROL METHOD THEREOF
摘要 A process gas supply cycle pattern that will adversely affect the result of processing is changed beforehand. Based on information supplied from a setting input section, a pattern computation section obtains the result of computation of a process gas supply cycle pattern that includes a rotation cycle of a substrate rotation mechanism, a supply cycle of a process gas, a supply time of the process gas, and a supply count of the process gas. Based on information supplied from the setting input section, a simulator simulates the shape of a supply region of the process gas to be supplied onto a substrate. A comparison section compares the result of computation of the process gas supply cycle pattern determined by the pattern computation section against the result of referencing of a process gas supply cycle pattern that adversely affects the result of processing and is obtained from a storage section.
申请公布号 US2011287172(A1) 申请公布日期 2011.11.24
申请号 US201113112194 申请日期 2011.05.20
申请人 TOKYO ELECTRON LIMITED 发明人 MATSUDA KAZUHISA
分类号 C23C16/52;C23C16/455;C23C16/458 主分类号 C23C16/52
代理机构 代理人
主权项
地址