发明名称 A MICROELECTRONIC STRUCTURE INCLUDING A LOW K DIELECTRIC AND A METHOD OF CONTROLLING CARBON DISTRIBUTION IN THE STRUCTURE
摘要 Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.
申请公布号 WO2011106075(A3) 申请公布日期 2011.11.24
申请号 WO2011US00215 申请日期 2011.02.03
申请人 APPLIED MATERIALS, INC. 发明人 XIE, BO;DEMOS, ALEXANDROS, T.;RAJ, DAEMIAN;NGO, SURE;YIM, KANG, SUB
分类号 H01L21/3205;H01L21/205;H01L21/28 主分类号 H01L21/3205
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