SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要
Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.
申请公布号
WO2011145632(A1)
申请公布日期
2011.11.24
申请号
WO2011JP61350
申请日期
2011.05.11
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;ENDO, YUTA;SASAKI, TOSHINARI;NODA, KOSEI;SATO, MIZUHO