| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a negative resist material, in particular a chemical amplitude negative resist material, which has a high contrast of alkali dissolution rate before and after light exposure, has a high resolution at high sensitivity and small line edge roughness and is especially suitable as a fine pattern forming material in manufacturing a super LSI or in manufacturing a photo mask pattern material and to provide a pattern formation method and a photomask blank using the negative resist material. <P>SOLUTION: A negative resist material includes a polymer compound having repeating units a expressed by the following formula (1) and a weight-average molecular weight of 1,000 to 500,000. <P>COPYRIGHT: (C)2012,JPO&INPIT |
