发明名称 POWER SEMICONDUCTOR MODULE
摘要 <P>PROBLEM TO BE SOLVED: To provide a power semiconductor module capable of reducing the influence of an electromagnetic noise on the surroundings. <P>SOLUTION: A shield plate 20 is provided on one surface 11 of a module 10. Further, by folding an N terminal 14 of the module 10 and connecting it to a first terminal 22 of the shield plate 20, so as to make the shield plate 20 function as a bus bar. With this, by means of a current flowing in the module 10 from a P terminal 13 to the N terminal 14 and a current flowing from a first terminal unit 22 to a second terminal unit 23 of the shield plate 20, magnetic flux is mutually canceled, and thus, inductance generated in the module 10 can be reduced. Accordingly, it is possible to reduce the generation of a surge voltage caused by the inductance, and the influence on the surroundings. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011238645(A) 申请公布日期 2011.11.24
申请号 JP20100106272 申请日期 2010.05.06
申请人 DENSO CORP 发明人 SAKAI YASUYUKI
分类号 H01L25/07;H01L25/18;H02M7/48 主分类号 H01L25/07
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