| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a stable solid-state image pickup element having high sensitivity, that allows formation of a deep photoelectric conversion region even in the miniaturization of an element. <P>SOLUTION: A solid-state image pickup element of the present invention is formed using an n-type semiconductor substrate 203 comprising inside a p-type well 204 and photodiodes 201 arranged in matrix over the n-type semiconductor substrate 203. Each photodiode 201 comprises an element isolation region 202 including a first p-type impurity diffusion layer for element isolation 208. A region of the photodiode 201 includes a first n-type impurity diffusion layer 206 and a p-type impurity diffusion layer 207, which will serve as a light-receiving portion. An n-type impurity diffusion layer 205 is provided just below only a red pixel photodiode 201, and a second p-type impurity diffusion layer for element isolation 209 is provided just below blue pixel and green pixel photodiodes 201. <P>COPYRIGHT: (C)2012,JPO&INPIT |
