发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes an interlayer insulation layer pattern, a metal wire pattern exposed by a passage formed by a via hole formed in the interlayer insulation layer pattern to input and output an electrical signal, and a plated layer pattern directly contacting the metal wire pattern and filling the via hole. The method includes forming an interlayer insulation layer having a metal wire pattern to input and output an electrical signal formed therein, forming a via hole to define a passage that extends through the interlayer insulation layer until at least a part of the metal wire pattern is exposed, and forming a plated layer pattern to fill the via hole and to directly contact the metal wire pattern by using the metal wire pattern exposed through the via hole as a seed metal layer.
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申请公布号 |
US2011284936(A1) |
申请公布日期 |
2011.11.24 |
申请号 |
US201113108231 |
申请日期 |
2011.05.16 |
申请人 |
CHOI JU-IL;PHEE JAE-HYUN;LEE HYU-HA;LEE HO-JIN;HWANG SON-KWAN;SAMSUNG ELECTRONICS CO., LTD |
发明人 |
CHOI JU-IL;PHEE JAE-HYUN;LEE HYU-HA;LEE HO-JIN;HWANG SON-KWAN |
分类号 |
H01L29/772;H01L23/48 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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