| 摘要 |
Methods for fabricating a non-planar transistor. Fin field effect transistors (finFETs) are often built around a fin (e.g., a tall, thin semiconductive member). During manufacturing, a fin may encounter various mechanical stresses, e.g., inertial forces during movement of the substrate and fluid forces during cleaning steps. If the forces on the fin are too large, the fin may fracture and possibly render a transistor inoperative. Supporting one side of a fin before forming the second side of a fin creates stability in the fin structure, thereby counteracting many of the mechanical stresses incurred during manufacturing. |
