| 摘要 |
<p>A method for adjusting a metal gate work function of an NMOS device is provided, which mainly comprises the following steps: depositing a layer of metal nitride film or metal film on a high K dielectric by physical vapor deposition (PVD) method, as a metal gate electrode; then implanting metal ions, such as Tb,Er,Yb or Sr, into the metal gate electrode by use of ion implantation method; and carrying out rapid thermal annealing to drive doped metal ions onto the interface between the metal gate and the high-K gate dielectric, in order to adjust the metal gate work function. The method can be simply and easily realized, can improve capability of adjusting the metal gate work function, and is compatible with the CMOS process.</p> |
