| 摘要 |
<P>PROBLEM TO BE SOLVED: To form the gate, source and drain electrodes of a compound semiconductor device without causing any of pattern defects by using a simple method and not using a lift-off method. <P>SOLUTION: In a process of manufacturing an AlGaN/GaN HEMT, a protective insulation film 8 is formed on a compound semiconductor layer, an opening is formed on the protective insulation film 8, a conductive material for filling up the opening is formed on the protective insulation film 8, a mask is formed in a section corresponding to the upper part of the opening in the conductive material, and the conductive material is etched using the mask to form a gate electrode 15 (or a source electrode 45 and a drain electrode 46). Then a protective insulation film 16 is formed on the protective insulation film 8, openings are formed in the protective insulation films 8 and 16, and a conductive material for filling up the openings is formed on the protective insulation film 16. A mask is formed in a section corresponding to the upper part of the opening in the conductive material, and the conductive material is etched using the mask to form a source electrode 22 and a drain electrode 23 (or a gate electrode 53). <P>COPYRIGHT: (C)2012,JPO&INPIT |
