| 摘要 |
The micro-electromechanical semiconductor component is provided with a first silicon semiconductor substrate (16) having an upper face, into which a cavity (18) delimited by lateral walls and a floor wall is introduced, and having a second silicon semiconductor substrate (13) comprising a silicon oxide layer (14) and a polysilicon layer (15) applied thereon having a defined thickness. The polysilicon layer (15) of the second silicon semiconductor substrate (13) faces the upper face of the first silicon semiconductor substrate (16), the two silicon semiconductor substrates are bonded, and the second silicon semiconductor substrate (13) covers the cavity (18) in the first silicon semiconductor substrate (16). Grooves (19) that extend up to the polysilicon layer (15) are arranged in the second silicon semiconductor substrate (13) in the region of the section thereof that covers the cavity (18). |
