HIGH POWER GALLIUM NITRIDE FIELD EFFECT TRANSISTOR SWITCHES
摘要
A monolithic high power radio frequency switch includes a substrate, and first and second gallium nitride high electron mobility transistors on the substrate. Each of the first and second gallium nitride high electron mobility transistors includes a respective source, drain and gate terminal. The source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground. An RF input pad is coupled to the drain terminal of the first second gallium nitride high electron mobility transistor, an RF output pad is coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor.
申请公布号
WO2011146700(A1)
申请公布日期
2011.11.24
申请号
WO2011US37125
申请日期
2011.05.19
申请人
CREE INC.;SMITH, JR., THOMAS J.;WILLIS, MATTHEW;SRIRAM, SAPTHARISHI
发明人
SMITH, JR., THOMAS J.;WILLIS, MATTHEW;SRIRAM, SAPTHARISHI