发明名称
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of peeling a semiconductor thin film formed on a substrate by which etching speed uniformity is enhanced by an etching liquid with high penetration speed, thereby obtaining a good semiconductor thin film in a short time. <P>SOLUTION: When a semiconductor thin film (20) is on a substrate (11), a connection support (90) is provided to connect a plurality of semiconductor thin films (20) with each other and support them. The connection support (90) includes a sheet-like part (91) and a spacer (92) to form a gap between the sheet-like part (91) and the semiconductor thin film (20). The gap (20) passes through an etching liquid in the direction parallel to the plane of the substrate (11). <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP4819139(B2) 申请公布日期 2011.11.24
申请号 JP20090025704 申请日期 2009.02.06
申请人 发明人
分类号 H01L21/306;H01L33/02 主分类号 H01L21/306
代理机构 代理人
主权项
地址