发明名称 |
FOUR-TERMINAL SOI MESFET BASED LOW DROPOUT REGULATOR |
摘要 |
Embodiments of a Low Dropout (LDO) regulator are provided in which an n-channel Metal Semiconductor Field Effect Transistor (MESFET) is utilized as a pass transistor of the LDO regulator. In one embodiment, the LDO regulator is implemented on an integrated circuit die and includes an n-channel Semiconductor-on-lnsulator (SOI) MESFET pass transistor. A voltage applied to a substrate of the SOI MESFET pass transistor is controlled to configure the LDO regulator in either an ultra-low dropout voltage mode or a high Power Supply Rejection (PSR) mode. In another embodiment, the LDO regulator includes an re-channel MESFET pass transistor and a switch that operates to disconnect the MESFET pass transistor from a supply voltage of the LDO regulator when the LDO regulator is desired to be shut off. |
申请公布号 |
US2011285456(A1) |
申请公布日期 |
2011.11.24 |
申请号 |
US201013147245 |
申请日期 |
2010.02.05 |
申请人 |
THORNTON TREVOR JOHN;WILK SETH;BALIJEPALLI ASHA;LEPKOWSKI WILLIAM;ARIZONA BOARD OF REGENTS FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY |
发明人 |
THORNTON TREVOR JOHN;WILK SETH;BALIJEPALLI ASHA;LEPKOWSKI WILLIAM |
分类号 |
G05F1/10 |
主分类号 |
G05F1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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