| 摘要 |
PURPOSE: A light emitting device, a method for fabricating the light emitting device and a light emitting device package are provided to suppress the difference between lattice mismatch and thermal expansion by growing a buffer layer in a nitride semiconductor and a substrate. CONSTITUTION: In a light emitting device, a method for fabricating the light emitting device and a light emitting device package, a light emitting structure is formed on a substrate. The light emitting structure comprises a first electrical conduction semiconductor layer(120), an active layer(130) and a second electrical conduction semiconductor layer(140). A nitride semiconductor layer(170) is formed on the first and second electrical conduction semiconductor layer. A nitride semiconductor layer comprises an opening. A first electrode pad(180) is formed on the light emitting structure. |
