发明名称 |
DIELECTRIC STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dielectric structure formed on a heat-resisting substrate for forming a dielectric on a non-heat resisting substrate, and a peeling transition process to the non-heat resisting substrate of a dielectric film. <P>SOLUTION: The dielectric structure 1 has a first substrate 5, an oxide film 4 and a first electrode layer 3 formed on the first substrate 5, and a dielectric layer 2 formed on the first electrode layer 3. Between the first substrate 5 and the first electrode layer 3, a coupling layer 6 formed by Ti and the like so as to cover at least a part of the first substrate 5 is provided. By optimizing the mechanical characteristics of an interface according to residual stress in the dielectric after forming, the peeling characteristics of the interface in which the dielectric layer 2 and the electrode layer 3 is not peeled from the heat-resisting substrate in a forming process and peeled in a transition process can be obtained. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011238766(A) |
申请公布日期 |
2011.11.24 |
申请号 |
JP20100108684 |
申请日期 |
2010.05.10 |
申请人 |
JAPAN SCIENCE & TECHNOLOGY AGENCY;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
ICHIKI MASAAKI;SUGA TADATOMO;IIMURA KEITA;HOSONO TOMOHITO;ITO HISAHIRO;MAEDA RYUTARO |
分类号 |
H01G4/33;H01G4/12;H01L41/08;H01L41/09;H01L41/18;H01L41/22;H01L41/312;H01L41/39 |
主分类号 |
H01G4/33 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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