发明名称 POWER SEMICONDUCTOR MODULE
摘要 <P>PROBLEM TO BE SOLVED: To reduce thermal stress based on the difference of thermal coefficient of expansion between a heat spreader and a heat exchanger in a power semiconductor module to which the head spreader and heat exchanger are bonded. <P>SOLUTION: A heat spreader 11 is composed of a single material of Cu and a heat exchanger 30 is composed of a composite material of Al and Fe. Consequently, the linear expansion coefficient of one material (Al) constituting the composite material is larger than that of the single material (Cu), and the linear expansion coefficient of the other material (Fe) constituting the composite material is smaller than that of the single material (Cu). Since one material (Al) of the composite material is more prone to stretch than the single material (Cu) while the other material (Fe) is less prone to stretch than the single material (Cu), stretch of one material (Al) of the composite material is regulated by the other material (Fe) of the composite material. Consequently, generation of thermal stress based on the difference of thermal coefficient of expansion between the heat spreader 11 and the heat exchanger 30 can be reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011238642(A) 申请公布日期 2011.11.24
申请号 JP20100106269 申请日期 2010.05.06
申请人 DENSO CORP 发明人 SAKAI YASUYUKI
分类号 H01L23/36;H01L23/29;H01L25/07;H01L25/18 主分类号 H01L23/36
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