| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor which can improve a breakdown withstand pressure of a diaphragm. <P>SOLUTION: A semiconductor pressure sensor comprises: a first semiconductor substrate 3 having a recessed part 2 which is opened at one surface in the thickness direction; a second semiconductor substrate 4 which is arranged to be opposed to one surface of the first semiconductor substrate 3; and a first silicon oxide film 6 which is interposed between the first semiconductor substrate 3 and the second semiconductor substrate 4 and has a through-hole 5 which makes the recessed part 2 and the second semiconductor substrate 4 communicate with each other. When viewed from a facing side to the through-hole 5 and the opening of the recessed part 2, at least one part of an edge of the through-hole 5 is positioned inside of an opening edge of the recessed part 2. <P>COPYRIGHT: (C)2012,JPO&INPIT |
