| 摘要 |
The present invention relates to a method for producing chip stacks (31) having the following method sequence: a base layer (20), particularly a dielectric and/or photopatternable base layer, is applied to one carrier side (15) of a carrier (10), the carrier side (15) of which is provided with an adhesively active adhesion zone (14) and a less adhesively active support zone (11), wherein the base layer (20) is applied to a large extent over the full surface area of at least the support zone (11), the chip stacks (31) are set up on the base layer (20), the chip stacks (31) are cast integral, the carrier (10) is detached from the base layer (20). The invention also relates to a carrier for carrying out this method. |
