| 摘要 |
An object of an embodiment of the present invention is to provide a semiconductor device including a normally-off oxide semiconductor element whose characteristic variation is small in the long term. A cation containing one or more elements selected from oxygen and halogen is added to an oxide semiconductor layer, thereby suppressing elimination of oxygen, reducing hydrogen, or suppressing movement of hydrogen. Accordingly, carriers in the oxide semiconductor can be reduced and the number of the carriers can be kept constant in the long term. As a result, the semiconductor device including the normally-off oxide semiconductor element whose characteristic variation is small in the long term can be provided. |
