| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial silicon carbide single-crystal substrate in which a high-quality silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having a small off angle, and to provide a method for producing the same. <P>SOLUTION: In the epitaxial silicon carbide single-crystal substrate, a high-quality silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having a small off angle of 1 to 6°. The production method is also provided. The epitaxial film is grown by repeating a dope layer that is 0.5 μm or less and a non-dope layer that is 0.1 μm or less. In the epitaxial growth, the dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 20, and, at this time, nitrogen being a doping gas is introduced to be the dope layer, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. <P>COPYRIGHT: (C)2012,JPO&INPIT |
