| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain appropriate and highly efficient formation of a metal film on a substrate using metal mixture. <P>SOLUTION: A metal film formation system 1 includes: a carrying-in/out station 2 for carrying in and out a wafer W; a processing station 3 for forming a metal film; and a load lock unit 10 for connecting the carrying-in/out station 2 with the processing station 3. The processing station 3 includes an application unit 30 for applying metal mixture onto the wafer W; a pre-heat treatment unit 31 for heat-treating the wafer W applied with the metal mixture; a post-heat treatment unit 32 for further heat-treating the wafer W heat-treated by the pre-heat treatment unit 31; and a conveyance unit 33 for conveying the wafer W. The application unit 30, the pre-heat treatment unit 31, the post-heat treatment unit 32, the conveyance unit 33, and the load lock unit 10 are configured to switch each inside thereof to ambient air atmosphere or decompression atmosphere. <P>COPYRIGHT: (C)2012,JPO&INPIT |
