| 摘要 |
A semiconductor apparatus including: a substrate 12; a plurality of electrode pads 20 formed on a surface of the substrate 12; and a protection film 14 having a plurality of through holes 16 formed in one-to-one correspondence with the electrode pads 20, and covering circumferential edge portions of the electrode pads 20 and the surface of the substrate 12 except for areas under the electrode pads 20. An inner wall of each through hole 16 is a slant surface 22 slanted toward outside of the through hole 16. A plurality of metal layers 24 have been formed, each covering an exposed part of each electrode pad 20 not covered by the protection film 14 and an area of each slant surface extending from the exposed part up to a middle of the slant surface. A plurality of bumps 18 have been connected one-to-one with the metal layers 24.
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