发明名称 |
3D TWO-BIT-PER-CELL NAND FLASH MEMORY |
摘要 |
A 3D memory device is described which includes bottom and top memory cubes having respective arrays of vertical NAND string structures. A common source plane comprising a layer of conductive material is between the top and bottom memory cubes. The source plane is supplied a bias voltage such as ground, and is selectively coupled to an end of the vertical NAND string structures of the bottom and top memory cubes. Memory cells in a particular memory cube are read using current through the particular vertical NAND string between the source plane and a corresponding bit line coupled to another end of the particular vertical NAND string. |
申请公布号 |
US2011286283(A1) |
申请公布日期 |
2011.11.24 |
申请号 |
US20100785291 |
申请日期 |
2010.05.21 |
申请人 |
LUNG HSIANG-LAN;LUE HANG-TING;SHIH YEN-HAO;LAI ERH-KUN;LEE MING HSIU;WANG TIEN-YEN;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN;LUE HANG-TING;SHIH YEN-HAO;LAI ERH-KUN;LEE MING HSIU;WANG TIEN-YEN |
分类号 |
G11C16/04;H01L21/336 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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