发明名称 |
Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor JFETs |
摘要 |
<p>A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET.</p> |
申请公布号 |
AU2010247781(A1) |
申请公布日期 |
2011.11.24 |
申请号 |
AU20100247781 |
申请日期 |
2010.05.11 |
申请人 |
SS SC IP, LLC |
发明人 |
KELLEY, ROBIN LYNN;REES, FENTON |
分类号 |
H03K7/08;H03K17/687 |
主分类号 |
H03K7/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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