发明名称 Gate driver for enhancement-mode and depletion-mode wide bandgap semiconductor JFETs
摘要 <p>A DC-coupled two-stage gate driver circuit for driving a junction field effect transistor (JFET) is provided. The JFET can be a wide bandgap junction field effect transistor (JFET) such as a SiC JFET. The driver includes a first turn-on circuit, a second turn-on circuit and a pull-down circuit. The driver is configured to accept an input pulse-width modulation (PWM) control signal and generate an output driver signal for driving the gate of the JFET.</p>
申请公布号 AU2010247781(A1) 申请公布日期 2011.11.24
申请号 AU20100247781 申请日期 2010.05.11
申请人 SS SC IP, LLC 发明人 KELLEY, ROBIN LYNN;REES, FENTON
分类号 H03K7/08;H03K17/687 主分类号 H03K7/08
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