发明名称 HYBRID VERTICAL-CAVITY LASER
摘要 The present invention provides a light source (2) for light circuits on a silicon platform (3). A vertical laser cavity is formed by a gain region (101) arranged between a top mirror (4) and a bottom grating-mirror (12) in a grating region (11) in a silicon layer (10) on a substrate. A waveguide (18, 19) for receiving light from the grating region (11) is formed within or to be connected to the grating region, and functions as an 5 output coupler for the VCL. Thereby, vertical lasing modes (16) are coupled to lateral in-plane modes (17, 20) of the in-plane waveguide formed in the silicon layer, and light can be provided to e.g. photonic circuits on a SOI or CMOS substrate in the silicon.
申请公布号 KR20110126661(A) 申请公布日期 2011.11.23
申请号 KR20117020785 申请日期 2010.01.22
申请人 DANMARKS TEKNISKE UNIVERSITET 发明人 CHUNG, IL SUG
分类号 H01S5/183;H01S5/20 主分类号 H01S5/183
代理机构 代理人
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