METHOD FOR FORMING JUNCTION OF VERTICAL CELL IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A joining formation of the vertical cell of a semiconductor device is provided to prevent dopant to be expanded in a domain except a junction domain when forming junction by follow anneal by forming in advance a doping barrier layer on the surface of an insulating layer in which an opening is formed. CONSTITUTION: An active area(203) which is separated by a trench(202) is formed on a substrate(201). A hard mask film(204) is formed on the top of the active area. An insulating layer having an opening which exposes a part of the sidewall of the active area is formed. A doping barrier layer(209) is formed on the surface of the insulating layer. The insulating layer comprises an oxide film and the doping barrier layer comprises a film in which the oxide film is nitrified. A junction(212) is formed in the part of the sidewall which is exposed.