| 摘要 |
A static random-access memory (SRAM) and a method of controlling bit line voltage. In one embodiment, the SRAM includes: (1) an array of SRAM cells organized in rows and columns, (2) bit lines associated with the columns, (3) a high voltage power supply configured to supply a high supply voltage, (4) a low voltage power supply configured to supply a low supply voltage, (5) bit line precharge circuitry configured to precharge at least one of the bit lines to a first voltage and (6) standby circuitry configured to maintain a voltage of the at least one bit line at least a second voltage, the second voltage being lower than the first voltage and higher than the low supply voltage. |
