发明名称 |
Non-volatile magnetic memory element with graded layer |
摘要 |
A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound. |
申请公布号 |
US8063459(B2) |
申请公布日期 |
2011.11.22 |
申请号 |
US20070776692 |
申请日期 |
2007.07.12 |
申请人 |
RANJAN RAJIV YADAV;KESHTBOD PARVIZ;MALMHALL ROGER KLAS;AVALANCHE TECHNOLOGIES, INC. |
发明人 |
RANJAN RAJIV YADAV;KESHTBOD PARVIZ;MALMHALL ROGER KLAS |
分类号 |
H01L29/82;G11C11/00 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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