发明名称 |
Semiconductor device and method for producing the same |
摘要 |
A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r′ of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r. |
申请公布号 |
US8063437(B2) |
申请公布日期 |
2011.11.22 |
申请号 |
US20080193861 |
申请日期 |
2008.08.19 |
申请人 |
SASAKI YUICHIRO;OKASHITA KATSUMI;NAKAMOTO KEIICHI;KANADA HISATAKA;MIZUNO BUNJI;PANASONIC CORPORATION |
发明人 |
SASAKI YUICHIRO;OKASHITA KATSUMI;NAKAMOTO KEIICHI;KANADA HISATAKA;MIZUNO BUNJI |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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