发明名称 |
Ornand flash memory and method for controlling the same |
摘要 |
A semiconductor device that includes: a memory cell array that includes non-volatile memory cells; an area that is contained in the memory cell array and stores area data; a first storage unit that holds data transferred from the memory cell array, and outputs the data; and a control circuit that selects between a primary reading mode for causing the first storage unit to hold the area data transferred from the memory cell array and to output the area data, and a secondary reading mode for causing the first storage unit to hold a plurality of pieces of divisional data formed by dividing the area data and transferred from the memory cell array and to output the divisional data. |
申请公布号 |
US8064264(B2) |
申请公布日期 |
2011.11.22 |
申请号 |
US20070974295 |
申请日期 |
2007.10.11 |
申请人 |
SHINOZAKI NAOHARU;TAGUCHI MASAO;OGAWA AKIRA;ITO TAKUO;SPANSION LLC |
发明人 |
SHINOZAKI NAOHARU;TAGUCHI MASAO;OGAWA AKIRA;ITO TAKUO |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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