发明名称 Ornand flash memory and method for controlling the same
摘要 A semiconductor device that includes: a memory cell array that includes non-volatile memory cells; an area that is contained in the memory cell array and stores area data; a first storage unit that holds data transferred from the memory cell array, and outputs the data; and a control circuit that selects between a primary reading mode for causing the first storage unit to hold the area data transferred from the memory cell array and to output the area data, and a secondary reading mode for causing the first storage unit to hold a plurality of pieces of divisional data formed by dividing the area data and transferred from the memory cell array and to output the divisional data.
申请公布号 US8064264(B2) 申请公布日期 2011.11.22
申请号 US20070974295 申请日期 2007.10.11
申请人 SHINOZAKI NAOHARU;TAGUCHI MASAO;OGAWA AKIRA;ITO TAKUO;SPANSION LLC 发明人 SHINOZAKI NAOHARU;TAGUCHI MASAO;OGAWA AKIRA;ITO TAKUO
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
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