发明名称 |
Semiconductor strain gauge and the manufacturing method |
摘要 |
A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region. |
申请公布号 |
US8063457(B2) |
申请公布日期 |
2011.11.22 |
申请号 |
US20090590694 |
申请日期 |
2009.11.12 |
申请人 |
HAKOMORI IKUO;NAKAMURA YUJI;NAKANISHI KEIICHI;IDA KOICHI;TANITA CORPORATION;TOKO, INC. |
发明人 |
HAKOMORI IKUO;NAKAMURA YUJI;NAKANISHI KEIICHI;IDA KOICHI |
分类号 |
H01L29/84 |
主分类号 |
H01L29/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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