发明名称 Method of manufacturing semiconductor element
摘要 A step of forming a first auxiliary groove in a semiconductor element structure provided on a semiconductor substrate, a step of forming a second auxiliary groove in the semiconductor element structure, and a step of dividing the semiconductor substrate and the semiconductor element structure in a direction along the first auxiliary groove and the second auxiliary groove are provided, and in the dividing direction, a plurality of the second auxiliary grooves are arranged spaced apart from each other, and at least two first auxiliary grooves are arranged spaced apart from each other between at least a pair of adjacent second auxiliary grooves, and in the dividing step, a separation region interposed between the two first auxiliary grooves is divided, so as to improve such accuracy and suppress the problems such as a damage of the end surface due to cleavage of the substrate.
申请公布号 US8062959(B2) 申请公布日期 2011.11.22
申请号 US20080289767 申请日期 2008.11.03
申请人 SAKAMOTO KEIJI;SAKATA HIROKI;NICHIA CORPORATION 发明人 SAKAMOTO KEIJI;SAKATA HIROKI
分类号 H01L21/00 主分类号 H01L21/00
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