发明名称 Microelectronic package containing silicon patches for high density interconnects, and method of manufacturing same
摘要 A microelectronic package comprises a substrate (110), a silicon patch (120) embedded in the substrate, a first interconnect structure (131) at a first location of the silicon patch and a second interconnect structure (132) at a second location of the silicon patch, and an electrically conductive line (150) in the silicon patch connecting the first interconnect structure and the second interconnect structure to each other.
申请公布号 US8064224(B2) 申请公布日期 2011.11.22
申请号 US20080059133 申请日期 2008.03.31
申请人 MAHAJAN RAVI;SANE SANDEEP;INTEL CORPORATION 发明人 MAHAJAN RAVI;SANE SANDEEP
分类号 H05K7/02;H01L21/50;H01L21/78 主分类号 H05K7/02
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