发明名称 |
Microelectronic package containing silicon patches for high density interconnects, and method of manufacturing same |
摘要 |
A microelectronic package comprises a substrate (110), a silicon patch (120) embedded in the substrate, a first interconnect structure (131) at a first location of the silicon patch and a second interconnect structure (132) at a second location of the silicon patch, and an electrically conductive line (150) in the silicon patch connecting the first interconnect structure and the second interconnect structure to each other.
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申请公布号 |
US8064224(B2) |
申请公布日期 |
2011.11.22 |
申请号 |
US20080059133 |
申请日期 |
2008.03.31 |
申请人 |
MAHAJAN RAVI;SANE SANDEEP;INTEL CORPORATION |
发明人 |
MAHAJAN RAVI;SANE SANDEEP |
分类号 |
H05K7/02;H01L21/50;H01L21/78 |
主分类号 |
H05K7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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