Columnar non-volatile memory devices with auxiliary transistors and methods of operating the same

摘要

A non-volatile memory device includes at least one semiconductor column having a first sidewall and a second sidewall. The device also includes at least one gate electrode is disposed on the first sidewall and at least one control gate electrode disposed on the second sidewall. The device further includes at least one charge storage layer is disposed between the second sidewall and the at least one control gate electrode. The at least one gate electrode and the at least one control gate electrode may be disposed on opposite sides of the at least one semiconductor column such that they commonly control a channel region in the semiconductor column.